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| DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter 1 Top view BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. fpage 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM s 21 Note 1. Ts is the temperature at the soldering point of the collector pin. 2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain open base CONDITIONS open emitter - - - up to Ts = 80 C; note 1 IC = 70 mA; VCE = 8 V IC = Ic = 0; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C - MIN. - - - - TYP. MAX. 20 15 200 2 250 - - - - V V UNIT mA W pF GHz dB dB 60 - - - - 90 0.7 7 13 12 1995 Sep 04 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 80 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. BFG591 MAX. 20 15 3 200 2 +150 150 UNIT V V V mA W C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 35 UNIT K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 3 Philips Semiconductors Product specification NPN 7 GHz wideband transistor CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IE = 0 IC = 10 mA; IB = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 10 V IC = 70 mA; VCE = 8 V IB = Ib = 0; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C IC = 70 mA; VCE = 12 V; f = 2 GHz; Tamb = 25 C s 21 Vo Notes 2 BFG591 MIN. - - - - 60 - - - - - - - - - - TYP. MAX. 20 15 3 100 250 - - - - - - UNIT V V V nA pF GHz dB dB dB mV 90 0.7 7 13 7.5 12 700 insertion power gain output voltage IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 C note 2 s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. 2) ( 1 - s 2 ( 1 - s 11 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz. 1995 Sep 04 4 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 3.0 Ptot (W) 2.5 handbook, halfpage 250 MRA749 h FE 200 2.0 150 1.5 100 1.0 50 0.5 0 0 50 100 150 Ts (oC) 200 0 10 2 10 1 1 10 IC (mA) 10 2 VCE = 12 V. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current, typical values. 1.2 handbook, halfpage C re (pF) 0.8 MGC792 MGC793 handbook, halfpage 8 fT (GHz) 6 4 0.4 2 0 0 4 8 12 VCB (V) 16 0 1 10 I C (mA) 10 2 IC = 0; f = 1 MHz. f = 1 GHz; VCE = 12 V. Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 Transition frequency as a function of collector current, typical values. 1995 Sep 04 5 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, halfpage 25 MGC795 handbook, halfpage 10 MGC794 gain (dB) 20 gain (dB) 8 Gmax GUM 15 Gmax GUM 6 10 4 5 2 0 0 40 80 IC (mA) 120 0 0 40 80 IC (mA) 120 f = 900 MHz; VCE = 12 V. f = 2 GHz; VCE = 12 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MGC796 gain (dB) 40 G UM MSG 30 20 G max 10 0 10 102 103 f (MHz) 104 IC = 70 mA; VCE = 12 V. Fig.8 Gain as a function of frequency; typical values. 1995 Sep 04 6 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, halfpage -20 MGC797 dim (dB) handbook, halfpage -20 MGC798 d2 (dB) -30 -30 -40 -40 -50 -50 -60 -60 -70 0 40 80 IC (mA) 120 -70 0 40 80 IC (mA) 120 VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz. VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz. Fig.9 Intermodulation distortion as a function of collector current; typical values. Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. 1995 Sep 04 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o handbook, full pagewidth 1.0 1 135 o 0.5 3 GHz 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MGC799 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 . Fig.11 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 3 GHz 50 40 30 20 10 0o 135 o 45 o 90 o VCE = 12 V; IC = 70 mA. MGC800 Fig.12 Common emitter forward transmission coefficient (s21); typical values. 1995 Sep 04 8 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 135 o 45 o 90 o VCE = 12 V; IC = 70 mA. MGC801 Fig.13 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 2 5 0o 0 0.2 3 GHz 180 o 0 0.2 0.5 1 5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MGC802 1.0 90 o VCE = 12 V; IC = 70 mA; Zo = 50 . Fig.14 Common emitter output reflection coefficient (s22); typical values. 1995 Sep 04 9 Philips Semiconductors Product specification NPN 7 GHz wideband transistor SPICE parameters for the BFG591 crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (1) 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 38 Note 1. These parameters have not been extracted, the default values are shown. 1995 Sep 04 10 (1) (1) (1) BFG591 PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 - m V A UNIT fA handbook, halfpage C cb L1 B LB B' E' LE C' L2 C fA - - - V mA aA - A m - EV - pF mV m ps - V A deg pF mV m m ns F mV - m Cbe Ccb Cce L1 L2 L3 LB LE C be Cce MBC964 L3 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. Fig.15 Package equivalent circuit SOT223. List of components (see Fig.15) DESIGNATION 16 249 0.025 1.19 0.60 1.50 0.50 VALUE 182 fF fF fF nH nH nH nH nH UNIT 21 (1) 37 (1) Philips Semiconductors Product specification NPN 7 GHz wideband transistor PACKAGE OUTLINE BFG591 handbook, full pagewidth 0.95 0.85 S seating plane 6.7 6.3 3.1 2.9 0.1 S 0.32 0.24 B 0.2 M A 4 A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 0.80 0.60 4.6 3 2.3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.16 SOT223. 1995 Sep 04 11 Philips Semiconductors Product specification NPN 7 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFG591 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 04 12 |
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